Epitaxial lateral overgrowth of GaAs by LPE

被引：0
|
作者：
Nishinaga, Tatau [1 ]
Nakano, Tsuyoshi [1 ]
Zhang, Suian [1 ]
机构：
[1] Univ of Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1988年 / 27 pt 2卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] A model for anisotropic epitaxial lateral overgrowth
    Khenner, M
    Braun, RJ
    Mauk, MG
    JOURNAL OF CRYSTAL GROWTH, 2002, 241 (03) : 330 - 346
  • [32] Dislocation reduction of GaSb on GaAs by metalorganic chemical vapor deposition with epitaxial lateral overgrowth
    Zaima, Kotaro
    Hashimoto, Rei
    Ezaki, Mizunori
    Nishioka, Masao
    Arakawa, Yasuhiko
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) : 4843 - 4845
  • [33] Epitaxial lateral overgrowth of InP/GaAS (100) heterostructures by metalorganic chemical vapor deposition
    Xiong, Deping
    Ren, Xiaomin
    Wang, Qi
    Ren, Aiguang
    Zhou, Jing
    Lv, Jihe
    Cai, Shiwei
    Huang, Hui
    Huang, Yongqing
    MICROELECTRONICS JOURNAL, 2007, 38 (4-5) : 606 - 609
  • [34] Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition
    Yi, SS
    Hansen, DM
    Inoki, CK
    Harris, DL
    Kuan, TS
    Kuech, TF
    APPLIED PHYSICS LETTERS, 2000, 77 (06) : 842 - 844
  • [35] LATERAL EPITAXIAL OVERGROWTH OF GAAS BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION
    GALE, RP
    MCCLELLAND, RW
    FAN, JCC
    BOZLER, CO
    APPLIED PHYSICS LETTERS, 1982, 41 (06) : 545 - 547
  • [36] LIQUID-PHASE EPITAXIAL LATERAL OVERGROWTH OF GAAS ON 0.3-DEGREES-MISORIENTED EPITAXIAL SI SUBSTRATES
    UEN, WY
    NISHINAGA, T
    MATERIALS CHEMISTRY AND PHYSICS, 1995, 42 (04) : 231 - 236
  • [37] LPE GROWTH OF ALGAINAS EPITAXIAL LAYERS ON GAAS(100)
    SWARUP, P
    JAIN, RK
    VERMA, SN
    CHARAN, S
    TANDLE, DM
    JOURNAL OF CRYSTAL GROWTH, 1983, 63 (01) : 97 - 104
  • [38] REDISTRIBUTION OF EPITAXIAL SI ON (001) GAAS DURING OVERGROWTH BY GAAS
    BRANDT, O
    CROOK, GE
    PLOOG, K
    WAGNER, J
    MAIER, M
    APPLIED PHYSICS LETTERS, 1991, 59 (21) : 2730 - 2732
  • [39] Epitaxial Lateral Overgrowth of InP on Nanopatterned GaAs Substrates by Metal–Organic Chemical Vapor Deposition
    Y. B. Fan
    J. Wang
    J. Li
    H. Y. Yin
    H. Y. Hu
    Z. Y. Yang
    X. Wei
    Y. Q. Huang
    X. M. Ren
    Journal of Electronic Materials, 2018, 47 : 5518 - 5524
  • [40] Mask-induced strain in GaAs layers grown by liquid phase epitaxial lateral overgrowth
    Zytkiewicz, ZR
    Domagala, J
    Dobosz, D
    EPITAXIAL GROWTH-PRINCIPLES AND APPLICATIONS, 1999, 570 : 273 - 278
12345