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ADistributedPhaseShifterUsingBi1.5Zn1.0Nb1.5O7/Ba0.5Sr0.5TiO3ThinFilms
被引：0
作者：
李汝冠
蒋书文
高莉彬
李言荣
机构：
[1] StateKeyLaboratoryofElectronicThinFilmsandIntegratedDevices,UniversityofElectronicScienceandTechnologyofChina
关键词：
D O I：
暂无
中图分类号：
TB383.2 [];
学科分类号：
070205 ;
080501 ;
1406 ;
摘要：
We report the demonstration of a monolithic phase shifter employing Bi1.5Zn1.0Nb1.5O7（BZN）/Ba0.5Sr0.5TiO3（BST）thin films on sapphire substrates.The BST and BZN thin films are successively deposited by radiofrequency magnetron sputtering.A distributed phase shifter with a coplanar-waveguide transmission line periodically loaded with the BZN/BST capacitors is fabricated.The return loss of the circuit is better than-13dB from 1 to 12GHz,and it provides 65°phase shift with an insertion loss of-4dB at 12GHz.The results show that BZN/BST thin films are promising candidate dielectrics for rf/microwave tunable applications.
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页码：259 / 261
页数：3
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