A macro model of spin-transfer torque magnetic tunnel junction

被引：0

作者：

陈明博 ^{[1
,2
]}

李琨琨 ^{[2
]}

杨晓蕾 ^{[2
]}

彭雪 ^{[2
]}

李旺达 ^{[2
]}

刘恩隆 ^{[2
]}

吴惠桢 ^{[1
]}

何世坤 ^{[2
]}

机构：

[1] School of Physics and State Key Laboratory for Silicon and Advanced Semiconductor Materials, Zhejiang University

[2] Zhejiang HIKSTOR Technology Co,

来源：

Chinese Physics B | 2024年 / 33卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The precise compact modeling of magnetic devices is pivotal for the integrated design of spin-transfer torque magnetic tunnel junction(STT-MTJ) in conjunction with CMOS circuitry. This work presents a macro model for an STT-MTJ which is compatible with SPICE simulation platforms. The model accurately replicates the electrical performance of the MTJ, encompassing the resistance-voltage characteristics and the pulse-width-dependent state switching behavior, and is validated with various experimental data. Additionally, the impact of process variations, particularly those affecting the MTJ diameter and barrier thickness is investigated and summarized in a corner model. Monte Carlo simulations demonstrate that our adaptable and streamlined model can be efficiently incorporated into the design of integrated circuits.

引用

页码：544 / 550

页数：7

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