Atomic/Molecular Layer Deposition Technology and Its Application in Advanced Process of Semiconductor

Atomic layer deposition (ALD) is a technology of vapor-phase deposition of thin films. Based on the mechanism of continuous self-limiting reaction of surface chemical saturation adsorption, atomic level conformal growth can be achieved on a variety of substrates during ALD process. Relying on this unique advantage, ALD has become an important technology in the advanced process of semiconductor, providing an important technical support for the device process to achieve atomic size and accuracy. Different from the traditional chemical vapor deposition (CVD) and physical vapor deposition (PVD), ALD growths thin film at lower temperature with excellent step coverage, precise controllability of thickness and composition at atomic scale. Molecular layer deposition (MLD) is a kind of vapor-phase deposition method similar to ALD, which can accurately control the thickness and composition of the prepared polymer films, and with excellent conformality as well. This review introduces the technical principle and characteristics of ALD firstly, and then summaries the application examples of ALD in advanced semiconductor process, including high-k dielectric materials, seed layer materials, diffusion barrier materials, spacer materials, and water vapor barrier materials. Subsequently, the MLD technology and the application of inorganic-organic hybrid films deposited by ALD/MLD combination technology in dielectric materials and water vapor barrier materials are introduced. Finally, a summary is given, and it is pointed out that ALD and MLD technology will play an increasingly important role in advanced chip device process. © 2024 Cailiao Daobaoshe/ Materials Review. All rights reserved.