Effects of process parameters on the microstructure and properties of LaNiO3 thin films

LaNiO3 thin films have been prepared by RF sputtering and then crystallized after post-annealing. The resistivity was characterized by four probe measurements. The influence of process parameters such as oxygen partial pressure, sputtering power and post-annealing on the microstructure and properties were investigated by XRD, ICP-AES, AFM respectively. It is found that the film was crystallized when annealing at 550°C, however, annealing at 700°C produced better electrical properties and smooth surface. When the oxygen partial pressure is kept between 10% to 25%, the content ratio of La to Ni is of the stoichiometric composition. The resistivity increased with increasing oxygen partial pressure.