Resistive Switching Memory Devices Based on Proteins

被引:0
|
作者
Wang, Hong [1 ]
Meng, Fanben [1 ]
Zhu, Bowen [1 ]
Leow, Wan Ru [1 ]
Liu, Yaqing [1 ]
Chen, Xiaodong [1 ]
机构
[1] School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore
关键词
Critical challenges - Data storage devices - Electronic device - Materials selection - Natural biomaterials - Naturally occurring - Resistive switching - Resistive switching memory;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:7670 / 7676
相关论文
共 50 条
  • [31] HfO2-based resistive switching memory devices for neuromorphic computing
    Brivio, S.
    Spiga, S.
    Ielmini, D.
    NEUROMORPHIC COMPUTING AND ENGINEERING, 2022, 2 (04):
  • [32] The growth of metallic nanofilaments in resistive switching memory devices based on solid electrolytes
    Guo, H. X.
    Gao, L. G.
    Xia, Y. D.
    Jiang, K.
    Xu, B.
    Liu, Z. G.
    Yin, J.
    APPLIED PHYSICS LETTERS, 2009, 94 (15)
  • [33] Flexible Resistive Switching Memory Devices Based on Graphene Oxide Polymer Nanocomposite
    Zhao, Enming
    Liu, Shuangqiang
    Liu, Xiaodan
    Wang, Chen
    Liu, Guangyu
    Xing, Chuanxi
    NANO, 2020, 15 (09)
  • [34] Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices
    Kim, Myung Ju
    Jeon, Dong Su
    Park, Ju Hyun
    Kim, Tae Geun
    APPLIED PHYSICS LETTERS, 2015, 106 (20)
  • [35] Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices
    Liu, Li-Feng
    Kang, Jin-Feng
    Xu, Nuo
    Sun, Xiao
    Chen, Chen
    Sun, Bing
    Wang, Yi
    Liu, Xiao-Yan
    Zhang, Xing
    Han, Ru-Qi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2701 - 2703
  • [36] Gd doping improved resistive switching characteristics of TiO2 -based resistive memory devices
    Liu, Li-Feng
    Kang, Jin-Feng
    Xu, Nuo
    Sun, Xiao
    Chen, Chen
    Sun, Bing
    Wang, Yi
    Liu, Xiao-Yan
    Zhang, Xing
    Han, Ru-Qi
    Japanese Journal of Applied Physics, 2008, 47 (4 PART 2): : 2701 - 2703
  • [37] Improved unipolar resistive switching characteristics of mixed-NiOx/NiOy-film-based resistive switching memory devices
    Liu, Lifeng
    Hou, Yi
    Chen, Bing
    Gao, Bin
    Kang, Jinfeng
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (09)
  • [38] Improved unipolar resistive switching characteristics of mixed-NiOx/NiOy-film-based resistive switching memory devices
    Institute of Microelectronics, Peking University, Beijing
    100871, China
    Jpn. J. Appl. Phys., 9
  • [39] Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices
    Fleck, K.
    Boettger, U.
    Waser, R.
    Aslam, N.
    Hoffmann-Eifert, S.
    Menzel, S.
    2016 46TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2016, : 160 - 163
  • [40] Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices
    Hee-Dong Kim
    Min Ju Yun
    Sungho Kim
    Journal of the Korean Physical Society, 2016, 69 : 439 - 442