Fabrication and characteristics of GaN-based microcavity light-emitting diodes with high reflectivity AIN/GaN distributed bragg reflectors

被引：0
|
作者：
Peng, Yu-Chun [1 ]
Kao, Chih-Chiang [1 ]
Huang, Hung-Wen [1 ]
Chu, Jung-Tang [1 ]
Lu, Tien-Chang [1 ]
Kuo, Hao-Chung [1 ]
Wang, Shing-Chung [1 ]
Yu, Chang-Chin [2 ]
机构：
[1] Department of Photonics, Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
[2] Highlink Corporation, Hsinchu 300, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 4 B期
关键词：
In this paper; we report a GaN-based microcavity light-emitting diode (MCLED) which is composed of 25 pairs of high-reflectivity GaN/AIN distributed Bragg reflector (DBR) and 6 pairs of ex-situ deposited SiO2/TiO 2 dielectric mirrors. The electroluminescence peak of this structure matched well with the high reflectance area of the top and bottom DBRs; and shows a narrow emission of approximately 6.7 nm. The fabricated device also shows a more excellent performance on the stability of the emission peak wavelength while varying injection current density and operating temperature than a regular LED. © 2006 The Japan Society of Applied Physics;
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Journal article (JA)
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页码：3446 / 3448
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