Extreme reduction of on-resistance in vertical GaN p-n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method

被引：7

作者：

Takino, Junichi ^{[1
,2
]}

Sumi, Tomoaki ^{[1
]}

Okayama, Yoshio ^{[1
]}

Kitamoto, Akira ^{[2
]}

Imanishi, Masayuki ^{[2
]}

Yoshimura, Masashi ^{[2
]}

Asai, Naomi ^{[3
]}

Ohta, Hiroshi ^{[3
]}

Mishima, Tomoyoshi ^{[3
]}

Mori, Yusuke ^{[2
]}

机构：

[1] Panasonic Corp, Mfg Innovat Div, Kadoma, Osaka 5718502, Japan

[2] Osaka Univ, Div Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan

[3] Hosei Univ, Res Ctr Ion Beam Technol, Koganei, Tokyo 1848584, Japan

来源：

APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 07期

基金：

日本科学技术振兴机构;

关键词：

gallium nitride; oxide vapor phase epitaxy (OVPE); low dislocation density; high carrier concentration; low on-resistance; wafers; p-n diodes; GROWTH;

D O I：

10.35848/1882-0786/aba018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low dislocation density and low-resistance GaN wafers are in high demand for improving the performance of vertical GaN power devices. Recently, GaN wafers with the dislocation density of 8.8 x 10(4) cm(-2)and the resistivity of 7.8 x 10(-4)omega cm, were fabricated using oxide vapor phase epitaxy (OVPE). In this study, GaN p-n diodes on GaN wafers prepared by the OVPE method were evaluated for verifying their suitability as vertical GaN power devices. An extremely low-differential specific on-resistance of 0.08 m omega cm(2)and a high breakdown voltage of 1.8 kV were obtained from forward and reverseI-Vmeasurements.

引用

页数：4

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