Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction

被引:0
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作者
Kawazu, Takuya [1 ]
机构
[1] Natl Inst Mat Sci, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan
关键词
IONIC LIQUIDS SYNTHESIS; EXTRACTION; ACTINIDE; BEHAVIOR; TENSION;
D O I
10.1063/5.0233346
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We demonstrate that the gate voltage V-g tunes the Schottky photocurrent I-SG for the irradiation of two lights (Light A and B) in an n-AlGaAs/GaAs/AlGaAs double-heterojunction. Light A is a 975-nm laser that illuminates the entire Schottky gate region at 280 mu W/mm(2). Light B is a 670-nm laser that locally illuminates the ungated region at 0.4 mu W. When V-g = 0 V, Light B doubles I-SG for Light A. At V-g = 87 mV, I-SG is generated only when both Light A and B are irradiated simultaneously, like the logical operation A boolean AND B. When V-g = 165 mV, I-SG is induced only for the illumination of Light A alone, like A boolean AND(B) over bar. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International (CC BY-NC-ND) license (https://creativecommons.org/licenses/by-nc-nd/4.0/).
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页数:5
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