Pressure-free localized laser bonding for silicon and glass

被引：0

作者：

Wuhan National Laboratory for Optoelectronics, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China ^{[1
]}

机构：

来源：

Pan Tao Ti Hsueh Pao | 2007年 / 2卷 / 217-221期

关键词：

MEMS - Residual stresses - Semiconducting silicon;

D O I：

暂无

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学科分类号：

摘要：

A novel pressure-free localized laser bonding process for silicon and glass has been developed. This process has been successfully realized by applying surface activation to wafers and selecting suitable laser parameters and bonding conditions. The effects of factors in this bonding method, such as laser power, scanning velocity, and base material, were also studied. The experimental results demonstrate that the bondline becomes wider at higher laser powers and smaller scanning velocities. The experiment also shows that this bond process can efficiently reduce residual stress in bonded pairs and control the bondline width. Tensile experiments indicate that the bond strength is comparable with that obtained by other bonding methods. This process can provide a simple and robust bonding method with rapid processing time and high selectivity of bonding area for the packaging and fabrication of MEMS devices.

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