Effect of substrate orientation on microstructure of Al-doped 3C-SiC films

被引：0

作者：

Su, Jianfeng ^{[1
]}

Xiao, Hongyu ^{[1
]}

Niu, Qiang ^{[1
]}

Tang, Chunjuan ^{[1
]}

Zhang, Yongsheng ^{[1
]}

Fu, Zhuxi ^{[2
]}

机构：

[1] Department of Mathematics and Physics, Luoyang Institute of Science and Technology, Luoyang

[2] Department of Physics, University of Science and Technology of China, Hefei

来源：

Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society | 2015年 / 43卷 / 07期

关键词：

Aluminum-doped; Low-pressure chemical vapor deposition; Microstructure; Silicon carbide films; Substrate orientation;

D O I：

10.14062/j.issn.0454-5648.2015.07.22

中图分类号：

学科分类号：

摘要：

Al-doped 3C-SiC films were deposited on Si (100) and Si (111) substrates via low-pressure chemical vapor deposition (LPCVD). The microstructure and the evolution of strain stress in SiC films were analyzed by X-ray diffraction (XRD) and Raman spectroscopy, respectively. The surface morphology of SiC films was determined by scanning electron microscopy (SEM). The results indicate that the concentration of Al doping has a dominant effect on the crystal quality of SiC film grown on Si (100) substrate. The Al-doped 3C-SiC film can be obtained on Si (100) substrate when an appropriate amount of trimethylaluminum (TMA) is added. The growth of Al-doped SiC film follows a step-ﬂow growth mode. The surface of SiC films grown on Si (100) substrate presents a square-shaped structure, and that of SiC films grown on Si (111) substrate exhibits a triangular-shaped structure. The thickness of films grown on Si (100) substrate is thicker. For the film deposited on Si (100) substrate, the strain stress of SiC films releases due to the incorporation of Al ion and the increase of film thickness. For the films deposited on Si (111) substrate, the strain stress varies from tensile to compressive, and the split between longitudinal optical (LO) phonon peak and transverse optical (TO) phonon peak increases due to the enhancement of SiC film ionicity and the transformation of growth mode. ©, 2015, Chinese Ceramic Society. All right reserved.

引用

页码：986 / 990

页数：4

共 18 条

[11] Takahashi K., Nishino S., Saraie J., Effect of acceptor impurity addition in low temperature growth of 3C-SiC, J Cryst Growth, 115, 1-4, pp. 617-622, (1991)
[12] Su J.-F., Yao R., Zhong Z., Et al., Effect of Al doping on properties of SiC films, Chin Phys Lett, 25, 9, pp. 3346-3349, (2008)
[13] Ishida Y., Takahashi T., Okumura H., Et al., Effect of reduced pressure on 3C-SiC heteroepitaxial growth on Si by CVD, Chem Vap Deposition, 12, 8-9, pp. 495-501, (2006)
[14] Lin L., Synthesis and optical property of large-scale centimetres-long silicon carbide nanowires by catalyst-free CVD route under superatmospheric pressure conditions, Nanoscale, 3, 4, pp. 1582-1591, (2011)
[15] Feng Z.C., Mascarenhas A.J., Choyke W.J., Et al., Raman scattering studies of chemical-vapor-deposited cubic SiC films of (100) Si, J Appl Phys, 64, 6, pp. 3176-3186, (1988)
[16] Mukaida H., Okumura H., Lee J.H., Et al., Raman scattering of SiC: Estimation of the internal stress in 3C-SiC on Si, J Appl Phys, 62, 1, pp. 254-257, (1987)
[17] Olego D., Cardona M., Vogl P., Pressure-dependence of the optical phonons and transverse effective charge in 3C-SiC, Phys Rev B, 25, 6, pp. 3878-3888, (1982)
[18] Scott J.F., Toms D.J., Dang L.S., Et al., Magneto-Raman scattering from Al acceptors in SiC, Phys Rev B, 23, pp. 2029-2031, (1981)

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