Modeling and simulation of high power laser diode driver design

被引:0
|
作者
Xin, De-Sheng [1 ]
Zhang, Jian-Jia [1 ]
Zhang, Meng-Meng [1 ]
Zhang, Hong-Chen [1 ]
机构
[1] National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, Jilin, China
来源
Binggong Xuebao/Acta Armamentarii | 2010年 / 31卷 / 11期
关键词
Metals - Oxide semiconductors - SPICE - High power lasers - MOS devices - Heterojunction bipolar transistors - Power semiconductor diodes - Power MOSFET - Thermography (temperature measurement);
D O I
暂无
中图分类号
学科分类号
摘要
Analog circuits, digital circuits and digital-analog hybrid circuit small-signal circuit computer simulation technology is now mature, but the high power circuit's computer simulation technology must consummate. When the high-power device is active, the power device will generate heat. The small signal circuit's computer simulation technology still could not simulate the high power electric circuit's active status. The power stages of semiconductor laser driver mostly are high power circuit, the establishment of power devices can describe the working state of the PSPICE simulation software model is one of the problems that must be solved. A metal-oxide-semiconductor field-effect transistor (MOSFET) model, including thermal model, was established according to the structure, operating principle and self-consumption of power device. The computer simulation of semiconductor laser driving source was conducted by using this model. The model was verified by a practicable system. This model is also suited for the computer simulation of other high power circuits.
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页码:1418 / 1421
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