Erratum: Conductive SiO2/HfO2 distributed Bragg reflector achieved by electrical breakdown and its application in GaN-based light emitters (J. Appl. Phys. (2022) 131 (045301) DOI: 10.1063/5.0074868)

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Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo [1 ]
315201, China
不详 [2 ]
100049, China
不详 [3 ]
230026, China
不详 [4 ]
315100, China
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J Appl Phys | / 7卷
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