Injection damage of the integrated silicon low-noise amplifier

被引：6

作者：

Chai C.-C. ^{[1
]}

Zhang B. ^{[1
]}

Ren X.-R. ^{[1
]}

Leng P. ^{[1
]}

机构：

[1] Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ.

来源：

Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University | 2010年 / 37卷 / 05期

关键词：

Damage effect; Energy injection; Low noise amplifier(LNA); Noise figure; Passive resistance;

D O I：

10.3969/j.issn.1001-2400.2010.05.022

中图分类号：

学科分类号：

摘要：

The area between the base and the emitter of a bipolar active device inside the silicon and GaAs low noise amplifiers(LNA) is most vulnerable to energy injection. Besides the active device, the interior passive resistance of Si-LNA is also one of the elements vulnerable to external energy injection. To study the damage mechanism of energy injection and its effect on the performance parameters of LNA, the energy-dispersive X-ray spectroscopy (EDS) analysis and the scanning electron microscope (SEM) analysis of the Si-LNA pre-and post-energy injection have been made. The SEM analysis indicates that the passive resistance and the base electrode of a bipolar junction transisitor have been abnormal respectively after the injection of various kinds of energy. A comparion between the energy-dispersive X-ray spectrums of normal and abnormal regions shows an obvious change in the constituents of the abnormal region of an electrode. Simulation results of ADS2004A indicate that the increase in resistance caused by passive resistance damage after energy injection leads to the degenerations of the LNA noise figure and gain characteristic. Meanwhile, experimental results show that the noise figure NF is more sensitive to energy injection than the gain characteristic, i.e., the effect of energy injection on the noise figure is far stronger than that on the gain. Therefore, the change in the noise figure NF should be recognized as one of the significant criteria for the Si-LNA damage effect.

引用

页码：898 / 903

页数：5

共 15 条

[1]

Wunsch D.C., Bell R.R., Determination of threshold failure levels of semiconductor diodes and transistors due to pulse voltage, IEEE Trans on Nuclear Sci, 15, 6, pp. 244-259, (1968)

[2]

Jenkins C.R., Durgin D.L., EMP susceptibility of integrated circuits, IEEE Trans on Nuclear Sci, 22, 6, pp. 2494-2499, (1975)

[3]

Jenkins C.R., Durgin D.L., An evaluation of IC EMP failure statistics, IEEE Trans on Nuclear Sci, 24, 6, pp. 2361-2364, (1977)

[4]

Yuan Q., Wu Z., Yang J., Et al., Research on effects of ESD and square-wave EMP on microelectronic device, High Voltage Engineering, 32, 6, pp. 47-50, (2006)

[5]

Yang J., Liu S., Yuan Q., Et al., Square-wave EMP damage of microwave low-noise silicon transistors, High Voltage Engineering, 33, 7, pp. 111-114, (2007)

[6]

Zhang B., Chai C., Yang Y., A novel ESD protection circuit based-on CMOS process, Journal of Semiconductor, 29, 9, pp. 1808-1812, (2008)

[7]

Zhu Z., Hao Y., Fang J., Et al., Investigation of the source-side thermal breakdown mechanism in the deep submicron technology GGNMOSFET under ESD conditions, Journal of Xidian University, 33, 6, pp. 911-916, (2006)

[8]

Xi X., Chai C., Ren X., Et al., Transient response of bipolar transistor under intense electromagnetic pulse on collector, 16th International Symposium on the Physical & Failure Analysis of Integratedcircuits, pp. 443-446, (2009)

[9]

Xi X., Chai C., Ren X., Et al., EMP injection damage effects of a bipolar transistor and its relationship between the injecting voltage and energy, Journal of Semiconductor, 31, 4, pp. 044005-1, (2010)

[10]

Chai C., Yang Y., Zhang B., Et al., Experimental study on energy injection damage of a GaAs low noise amplifier with and without DC bias, 9th International Conference on Solid-state and Integrated-circuit Technology, pp. 1528-1531, (2008)

← 1 2 →