Dot-height dependence of photoluminescence from ZnO quantum dots

被引：0
|
作者：
Nakamura, Atsushi [1 ]
Okamatsu, Kota [1 ]
Tawara, Takehiko [2 ]
Gotoh, Hideki [2 ]
Temmyo, Jiro [1 ]
Matsui, Yoshio [3 ]
机构：
[1] Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 305-8501, Japan
[2] NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
[3] Advanced Materials Laboratory, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 4 PART 2期
关键词：
Zinc oxide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：3007 / 3009
相关论文
共 50 条
  • [1] Dot-height dependence of photoluminescence from ZnO quantum dots
    Nakamura, Atsushi
    Okamatsu, Kota
    Tawara, Takehiko
    Gotoh, Hideki
    Temmyo, Jiro
    Matsui, Yoshio
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 3007 - 3009
  • [2] Size dependence of photoluminescence and resonant Raman scattering from ZnO quantum dots
    Cheng, Hsin-Ming
    Lin, Kuo-Feng
    Hsu, -Cheng Hsu
    Hsieh, Wen-Feng
    APPLIED PHYSICS LETTERS, 2006, 88 (26)
  • [3] Temperature dependence of photoluminescence characteristics of excitons in stacked quantum dots and quantum dot chains
    Kojima, Osamu
    Nakatani, Hiroaki
    Kita, Takashi
    Wada, Osamu
    Akahane, Kouichi
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (07)
  • [4] Effect of Dot-Height Truncation on the Device Performance of Multilayer InAs/GaAs Quantum Dot Solar Cells
    Zribi, Jihene
    Ilahi, Bouraoui
    Paquette, Bernard
    Jaouad, Abdelatif
    Theriault, Olivier
    Hinzer, Karin
    Cheriton, Ross
    Patriarche, Gilles
    Fafard, Simon
    Aimez, Vincent
    Ares, Richard
    Morris, Denis
    IEEE JOURNAL OF PHOTOVOLTAICS, 2016, 6 (02): : 584 - 589
  • [5] Anomalous temperature dependence of photoluminescence from InAs quantum dots
    Jiang, WH
    Ye, XL
    Xu, B
    Xu, HZ
    Ding, D
    Liang, JB
    Wang, ZG
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (05) : 2529 - 2532
  • [6] On the temperature dependence of silicon quantum dot photoluminescence
    Nagornykh S.N.
    Pavlenkov V.I.
    Mikhaylov A.N.
    Belov A.I.
    Burdov V.A.
    Krasilnikova L.V.
    Kryzhkov D.I.
    Tetelbaum D.I.
    Russian Microelectronics, 2014, 43 (08) : 575 - 580
  • [7] Temperature dependence of photoluminescence in silicon quantum dots
    Wen, Xiaoming
    Van Dao, Lap
    Hannaford, Peter
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (12) : 3573 - 3578
  • [8] Excitation dependence of photoluminescence in silicon quantum dots
    Wen, Xiaoming
    Van Dao, Lap
    Hannaford, Peter
    Cho, Eun-Chel
    Cho, Young H.
    Green, Martin A.
    NEW JOURNAL OF PHYSICS, 2007, 9
  • [9] Anomalous optical processes in photoluminescence from ultrasmall quantum dots of ZnO
    Kukreja, L. M.
    Misra, P.
    Das, A. K.
    Sartor, J.
    Kalt, H.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2011, 29 (03):
  • [10] Enhancing device characteristics of 1.3 μm emitting InAs/GaAs quantum dot lasers through dot-height uniformity study
    Liu, Wei-Sheng
    JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 571 : 153 - 158
12345