High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V

被引：0
作者：
Chen, Siheng [1 ]
Cui, Peng [1 ]
Luo, Xin [1 ]
Wang, Liu [1 ]
Dai, Jiacheng [1 ]
Qi, Kaifa [1 ]
Zhang, Tieying [1 ]
Linewih, Handoko [1 ]
Lin, Zhaojun [1 ]
Xu, Xiangang [1 ]
Han, Jisheng [1 ]
机构：
[1] Shandong Univ, Inst Novel Semicond, Jinan 250100, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 12期
基金：
中国国家自然科学基金;
关键词：
P-GaN/AlGaN/GaN HEMT; threshold voltage; enhancement-mode; breakdown; ALGAN/GAN HEMTS; FIELD; PERFORMANCE;
D O I：
10.1109/LED.2024.3478819
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we proposed an enhanced mode P-GaN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) by combining thermal oxidation treatment of P-GaN with atomic layer deposition (OTALD) prior to gate metal deposition. Due to the thermal oxidation treatment, a smooth oxide interlayer between P-GaN and Al2O3 is formed. Compared with the device without treatment, the P-GaN gate HEMTs with OTALD present increased threshold voltage significantly from 1.8 V to 7.1 V and improved gate breakdown voltage from 18.9 V to 26.9 V. Additionally, the devices maintained a high on/off current ratio above 10(8) and a further improvement in off-state breakdown voltage from 1315 V to 1980 V. The record high threshold voltage and breakdown voltage make this technology promising for widespread application in P-GaN power devices.
引用
收藏
页码：2343 / 2346
页数：4
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