Role of vacancies to p-type semiconducting properties of SiGe nanowires

被引：0

作者：

Zhou, Rulong ^{[1
]}

Qu, Bingyan ^{[1
]}

Zhang, Bo ^{[1
]}

Li, Pengfei ^{[2
]}

Zeng, Xiao Cheng ^{[2
,3
]}

机构：

[1] School of Science and Engineering of Materials, Hefei University of Technology, Hefei Anhui 230009, China

[2] Department of Chemical Physics, University of Science and Technology of China, Hefei Anhui 230026, China

[3] Department of Chemistry, Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln NE 68588, United States

来源：

Journal of Materials Chemistry C | 2014年 / 2卷 / 32期

关键词：

549.3; Others; including Bismuth; Boron; Cadmium; Cobalt; Mercury; Niobium; Selenium; Silicon; Tellurium and Zirconium - 712.1 Semiconducting Materials - 712.1.1 Single Element Semiconducting Materials - 741.3 Optical Devices and Systems - 761 Nanotechnology - 933 Solid State Physics - 933.1 Crystalline Solids and Crystallography;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：6536 / 6546