Investigation of performance-enhanced GaN-based E-mode p-channel MOSFET with pre-ohmic-annealing treatment

被引：0

作者：

Su, Huake ^{[1
]}

Zhang, Tao ^{[1
]}

Xu, Shengrui ^{[1
]}

Tao, Hongchang ^{[1
]}

Wang, Yibo ^{[2
]}

Gao, Yuan ^{[1
]}

Hao, Yue ^{[1
]}

Zhang, Jincheng ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, State Key Lab Wide Bandgap Semicond Devices & Inte, Xian 710071, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, Suzhou 215123, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2024年 / 45卷 / 11期

基金：

中国国家自然科学基金;

关键词：

POA treatment; GaN; p-channel; E-Mode; barrier height; surface states; CONTACT; TRANSISTOR; DIFFUSION; FINFET; OXYGEN;

D O I：

10.1088/1674-4926/24050015

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Pre-ohmic-annealing (POA) treatment of P-GaN/AlN/AlGaN epitaxy under N2 atmosphere was demonstrated to effectively achieve good p-type ohmic contact as well as decreased epitaxy sheet resistance. Ohmic contact resistance (R c) extracted by transfer length method reduced from 38 to 23 Omega<middle dot>mm with alleviated contact barrier height from 0.55 to 0.51 eV after POA treatment. X-ray photoelectron spectroscopy and Hall measurement confirmed that POA treatment was able to reduce surface state density and improve the hole concentration of p-GaN. Due to the decreased R c and improved two-dimensional hole gas (2DHG) density, an outstanding-performance GaN E-mode p-channel MOSFET was successfully realized.

引用

页数：6

共 12 条

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