Simulation analysis of quantum confinement and short-channel effects in independent double-gate metal-oxide-semiconductor field-effect transistors

被引：0

作者：

Moreau, Mathieu ^{[1
]}

Munteanu, Daniela ^{[1
]}

Autran, Jean-Luc ^{[1
,2
]}

机构：

[1] IM2NP, UMR CNRS 6242, 49 rue Joliot-Curie, F-13384 Marseille Cedex 13, France

[2] Institut Universitaire de France (IUF), 103 boulevard Saint-Michel, F-75005 Paris, France

来源：

Japanese Journal of Applied Physics | 2008年 / 47卷 / 9 PART 1期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：7013 / 7018

共 50 条

[1] Simulation analysis of quantum confinement and short-channel effects in independent double-gate metal-oxide-semiconductor field-effect transistors
Moreau, Mathieu
Munteanu, Daniela
Autran, Jean-Luc
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (09) : 7013 - 7018
[2] Modeling of Subthreshold Swing and Analysis of Short-Channel Effects in Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
Ishimura, Kenta
Sadachika, Norio
Miura-Mattausch, Mitiko
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
[3] Quantum Mechanical Effects on the Threshold Voltage of Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors
Hu, Guang-Xi
Liu, Ran
Qiu, Zhi-Jun
Wang, Ling-Li
Tang, Ting-Ao
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (03)
[4] Quantum Compact Model of Drain Current in Independent Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors
Munteanu, Daniela
Autran, Jean-Luc
Moreau, Mathieu
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (02)
[5] An analytical model of triple-material double-gate metal-oxide-semiconductor field-effect transistor to suppress short-channel effects
Baral, Biswajit
Das, Aloke Kumar
De, Debashis
Sarkar, Angsuman
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2016, 29 (01) : 47 - 62
[6] Oscillation of gate leakage current in double-gate metal-oxide-semiconductor field-effect transistors
Do, V. Nam
Dollfus, P.
JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)
[7] Analysis of static and dynamic performance of short-channel double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors for improved cutoff frequency
Kranti, A., 1600, Japan Society of Applied Physics (44):
[8] Analysis of static and dynamic performance of short-channel double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors for improved cutoff frequency
Kranti, A
Chung, TN
Raskin, JP
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B): : 2340 - 2346
[9] A Compact Model of Gate-Voltage-Dependent Quantum Effects in Short-Channel Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors
Kim, Jihyun
Sun, Wookyung
Park, Seunghye
Lim, Hyein
Shin, Hyungsoon
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2011, 11 (04) : 278 - 286
[10] Suppressed short-channel effect of double-gate metal oxide semiconductor field-effect transistor and its modeling
Oka, Hideki
Tanabe, Ryo
Sadachika, Norio
Yumisaki, Akihiro
Miura-Mattausch, Mitiko
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B): : 2096 - 2100

← 1 2 3 4 5 →