Epitaxial growth of two-dimensional stanene

被引：0

作者：

Key Laboratory of Artificial Structures and Quantum Control, Ministry of Education, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai ^{[1
]}

200240, China

不详 ^{[2
]}

94305-4045, United States

不详 ^{[3
]}

100084, China

不详 ^{[4
]}

100084, China

不详 ^{[5
]}

210093, China

机构：

[1] Key Laboratory of Artificial Structures and Quantum Control, Ministry of Education, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai

[2] Department of Physics, McCullough Building, Stanford University, Stanford, 94305-4045, CA

[3] Department of Physics, Institute for Advanced Study, Tsinghua University, Beijing

[4] Collaborative Innovation Center of Quantum Matter, Beijing

[5] Collaborative Innovation Center of Advanced Microstructures, Nanjing

来源：

Nat. Mater. | / 10卷 / 1020-1025期

基金：

美国国家科学基金会; 中国国家自然科学基金;

关键词：

Compendex;

D O I：

10.1038/nmat4384

中图分类号：

学科分类号：

摘要：

Following the first experimental realization of graphene, other ultrathin materials with unprecedented electronic properties have been explored, with particular attention given to the heavy group-IV elements Si, Ge and Sn. Two-dimensional buckled Si-based silicene has been recently realized by molecular beam epitaxy growth, whereas Ge-based germanene was obtained by molecular beam epitaxy and mechanical exfoliation. However, the synthesis of Sn-based stanene has proved challenging so far. Here, we report the successful fabrication of 2D stanene by molecular beam epitaxy, confirmed by atomic and electronic characterization using scanning tunnelling microscopy and angle-resolved photoemission spectroscopy, in combination with first-principles calculations. The synthesis of stanene and its derivatives will stimulate further experimental investigation of their theoretically predicted properties, such as a 2D topological insulating behaviour with a very large bandgap, and the capability to support enhanced thermoelectric performance, topological superconductivity and the near-room-temperature quantum anomalous Hall effect.

引用

页码：1020 / 1025

页数：5

共 28 条

[1] Lebgue S., Bjorkman T., Klintenberg M., Nieminen R.M., Eriksson O., Two-dimensional materials from data filtering and ab initio calculations, Phys. Rev. X, 3, (2013)
[2] Xu Y., Et al., Large-gap quantum spin Hall insulators in tin films, Phys. Rev. Lett., 111, (2013)
[3] Liu C.C., Jiang H., Yao Y., Low-energy effective Hamiltonian involving spin-orbit coupling in silicene and two-dimensional germanium and tin, Phys. Rev. B, 84, (2011)
[4] Zhang G.F., Li Y., Wu C.J., Honeycomb lattice with multiorbital structure: Topological and quantum anomalous Hall insulators with large gaps, Phys. Rev. B, 90, (2014)
[5] Xu Y., Gan Z., Zhang S.C., Enhanced thermoelectric performance and anomalous Seebeck effects in topological insulators, Phys. Rev. Lett., 112, (2014)
[6] Wang J., Xu Y., Zhang S.C., Two-dimensional time-reversal-invariant topological superconductivity in a doped quantum spin-Hall insulator, Phys. Rev. B, 90, (2014)
[7] Wu S.C., Shan G., Yan B.H., Prediction of near-room-temperature quantum anomalous Hall effect on honeycomb materials, Phys. Rev. Lett., 113, (2014)
[8] Vogt P., Et al., Silicene: Compelling experimental evidence for graphene like two-dimensional silicon, Phys. Rev. Lett., 108, (2012)
[9] Liu Z.L., Et al., Various atomic structures of monolayer silicene fabricated on Ag(111), New J. Phys., 16, (2014)
[10] Dvilla M.E., Xian L., Cahangirov S., Rubio A., Lay G.L., Germanene: A novel two-dimensional germanium allotrope akin to graphene and silicene, New J. Phys., 16, (2014)

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