4H-SiC: A new nonlinear material for midinfrared lasers

被引：133
作者：
机构：
[1] Research and Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
[2] Key Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
来源：
Chen, X. (chenx29@iphy.ac.cn) | 1600年 / Wiley-VCH Verlag卷 / 07期
基金：
中国国家自然科学基金;
关键词：
Difference-frequency generation; Midinfrared; Nonlinear optics; Phase matching; SiC;
D O I：
10.1002/lpor.201300068
中图分类号：
学科分类号：
摘要：
Nonlinear optical (NLO) frequency conversion is commonly used for generating midinfrared (MIR) lasers that offer light sources for a variety of applications. However, the low laser damage thresholds of NLO crystals used so far seriously limit the output power of MIR lasers. Here, a new nonlinear material 4H-SiC is demonstrated for producing MIR laser. Broadband MIR radiation ranging from 3.90 to 5.60 μm is generated in 4H-SiC by phase-matched difference-frequency generation for the first time. The results may open a door to practically utilize wide-bandgap semiconductors with high laser damage thresholds as NLO materials for high power output of MIR lasers. © 2013 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：831 / 838
页数：7
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