Impact of high-k HfO2 dielectric on the low-frequency noise behaviors in amorphous ingazno thin film transistors

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Semiconductor Laboratory, Samsung Advanced Institute of Technology, Yongin, Gyeonggi 446-712, Korea, Republic of [1 ]
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Jpn. J. Appl. Phys. | / 10卷 / 1002051-1002053期
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摘要：
Thin films
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