Current-voltage and capacitance-voltage characteristics of Sn/rhodamine- 101n-Si and Sn/rhodamine- 101p-Si Schottky barrier diodes

被引：0

作者：

Çakar, Muzaffer ^{[1
]}

Yildirim, Nezir ^{[2
]}

Karataş, Şukru ^{[3
]}

Temirci, Cabir ^{[4
]}

Türüt, Abdulmecit ^{[2
]}

机构：

[1] Department of Chemistry, Faculty of Sciences and Arts, University of Kahramanmaraş Süţü Imam, Kahramanmaraş 46100, Turkey

[2] Faculty of Sciences and Arts, Department of Physics, Atatürk University, 25240 Erzurum, Turkey

[3] Department of Physics, Faculty of Sciences and Arts, University of Kahramanmaraş Süţü Imam, Kahramanmaraş 4600, Turkey

[4] Faculty of Sciences and Arts, Department of Physics, Yüzüncü Yil University, Van 65080, Turkey

来源：

Journal of Applied Physics | 2006年 / 100卷 / 07期

关键词：

The nonpolymeric organic compound rhodamine-101 (Rh101) film on a n -type Si or p -type Si substrate has been formed by means of the evaporation process and the Sn/rhodamine-101/Si contacts have been fabricated. The SnRh101n-Si and SnRh101p-Si contacts have rectifying contact behavior with the barrier height (BH) values of 0.714 and 0.827 eV; and with ideality factor values of 2.720 and 2.783 obtained from their forward bias current-voltage (I-V) characteristics at room temperature; respectively. It has been seen that the BH value of 0.827 eV obtained for the SnRh101p-Si contact is significantly larger than BH values of the conventional Snp-Si Schottky diodes and metal/interfacial layer/Si contacts. Thus; modification of the interfacial potential barrier for metal/Si diodes has been achieved using a thin interlayer of the Rh101 organic semiconductor; this has been ascribed to the fact that the Rh101 interlayer increases the effective barrier height by influencing the space charge region of Si. © 2006 American Institute of Physics;

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