Research on improvement of the high frequency performances of SiGe HBT by the high resistivity Si substrate

被引：0

作者：

Yang, Weiming ^{[1
]}

Shi, Chen ^{[2
]}

Chen, Jianxin ^{[2
]}

机构：

[1] Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, School of Physics and Electronic Technology, Hubei University, Wuhan 430062, China

[2] Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China

来源：

Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 2007年 / 27卷 / 04期

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页码：503 / 508