Study of reverse recovery characteristic for 3-kV 600-A 4H-SiC flat package type pn diodes

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作者：
Ogata, Syuji [1 ]
Takayama, Daisuke [1 ]
Asano, Katsunori [1 ]
Sugawara, Yoshitaka [1 ]
机构：
[1] Kansai Electric Power Company, Japan
来源：
Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi) | 2007年 / 160卷 / 01期
关键词：
3-kV; 600-A; 4H-SiC flat package type pn diodes have been developed and their reverse recovery characteristics have been investigated. In spite of being pn junction diodes; the developed diodes have a short reverse recovery time of 0.153 μs at room temperature. These diodes have one-tenth lower recovery loss and one-third lower recovery time than those of a commercialized 2.5-kV Si diode in spite of a high blocking voltage. When this diode is used in a PWM inverter; the carrier frequency at which the on-state loss is equal to the switching loss is 1.45 times the Si diode's frequency at 398 K. By using the developed diode; high-voltage high-frequency inverter operation can be realized. © 2007 Wiley Periodicals; Inc;
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