Recent improvements in quantification of energy-dispersive X-ray spectra and maps in electron microscopy of semiconductors

被引：0
|
作者：
Walther, Thomas [1 ]
机构：
[1] Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, United Kingdom
来源：
Applied Research | 2024年 / 3卷 / 06期
关键词：
Electrons - Energy dispersive spectroscopy - Gallium arsenide - High resolution transmission electron microscopy - III-V semiconductors - Indium alloys - Nanocrystals - Semiconducting indium gallium arsenide - Semiconductor alloys - Semiconductor quantum dots - Semiconductor quantum wells - Si-Ge alloys;
D O I：
10.1002/appl.202300128
中图分类号：
学科分类号：
摘要：
This tutorial-style article describes recent improvements in the quantitative application of energy-dispersive X-ray spectroscopy and mapping in electron microscopes to semiconductors, with a focus on spatial resolution, sensitivity and accuracy obtainable in characterising the chemical composition of thin layers, quantum wells and quantum dots. Various approaches applicable in scanning electron microscopy of bulk and (scanning) transmission electron microscopy of thin film samples are outlined. Applications to semiconductor quantum well systems, mainly based on indium gallium arsenide and silicon germanium studied in the author's laboratory, are provided as examples. © 2024 The Author(s). Applied Research published by Wiley-VCH GmbH.
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