Hydrogen diffusion behavior in N doped ZnO: First-principles study

被引：0
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作者：
Hu, J. [1 ]
He, H.Y. [1 ]
Pan, B.C. [1 ]
机构：
[1] Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
来源：
Journal of Applied Physics | 2008年 / 103卷 / 11期
关键词：
We theoretically study the diffusion behavior of H in N doped ZnO; and find that N can trap the diffusing H nearby; with overcoming activation energies of no more than 0.5 eV. Then the trapped H moves around the doped N with overcoming low energy barriers (;
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