Influence of silane injection ways on optical emission spectroscopy and microstructure of microcrystalline silicon thin film

被引:0
|
作者
Li, Xin-Li [1 ,2 ,3 ]
Ren, Feng-Zhang [1 ,2 ]
Ma, Zhan-Hong [1 ,2 ]
Li, Wu-Hui [1 ,2 ]
Wang, Yu-Fei [1 ,2 ]
Lu, Jing-Xiao [3 ]
机构
[1] School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang, China
[2] Collaborative Innovation Center of Nonferrous Metals Henan Province, Luoyang, China
[3] Key Laboratory of Materials Physics, Department of Physics, Zhengzhou University, Zhengzhou, China
来源
Cailiao Rechuli Xuebao/Transactions of Materials and Heat Treatment | 2015年 / 36卷 / 04期
关键词
Deposition rates - Microstructure - Film growth - Plasma CVD - Silicon compounds - Light emission - Thin films - Microcrystalline silicon - Plasma enhanced chemical vapor deposition - Silicon solar cells;
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学科分类号
摘要
The microcrystalline silicon thin films and solar cells were deposited using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The growth process of intrinsic microcrystalline silicon thin films deposited with different SiH4 injection ways was online monitored by optical emission spectroscopy. The results show that using the silane profiling injection way is better than the other two injection ways in the film growth. During the thin film growth process, the emission intensity of Hα*, Hβ* and SiH* shows an increase tendency, and the higher ratio of Hα*/SiH* in the initial deposition stage can contribute to the formation of high quality interfacial layer. Using this way, a significant improvement in the solar cell performance is achieved. A high conversion efficiency of 7.81% is obtained for a single-junction microcrystalline silicon solar cell at the deposition rate of 1 nm/s. ©, 2015, Editorial Office of Transactions of Materials and Heat Treatment. All right reserved.
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页码:7 / 12
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