Investigation of structural inhomogeneity of silicon carbide by the low-angle X-ray scattering method

被引：0

作者：

Logunov, M.V. ^{[1
]}

Neverov, V.A. ^{[1
]}

Mamin, B.F. ^{[1
]}

机构：

[1] Ogarev Mordovia State University, 68 Bolshevistskaya str., Saransk,430005, Russia

来源：

Applied Physics | 2014年 / 05期

关键词：

X ray scattering - Point defects - Fractal dimension;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The nanostructure of silicon carbide crystals was investigated by small-angle X-ray scattering method. The presence of structural inhomogeneity's in the form of point defects, linear and volumetric fractals, fractal interfaces absence of scattering formations and units was showed.

引用

页码：15 / 18