Domain configuration changes under electric field-induced antiferroelectric-ferroelectric phase transitions in NaNbO3-based ceramics

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[1] Guo, Hanzheng
[2] Shimizu, Hiroyuki
[3] Mizuno, Youichi
[4] Randall, Clive A.
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Guo, Hanzheng (hug17@psu.edu) | 1600年 / American Institute of Physics Inc.卷 / 118期
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We recently developed a feasible crystal chemistry strategy to stabilize the antiferroelectricity in NaNbO3 through a chemical substitution to decrease the tolerance factor and increase the average electronegativity of the system [Shimizu et al; Dalton Trans. 44; 10763 (2015) and Guo et al; J; Appl; Phys; 117; 214103 (2015)]. Two novel lead-free antiferroelectric (AFE) solid solutions; (1-x)NaNbO3-xCaZrO3; and; (1-x)NaNbO3-xSrZrO3; have been found to exhibit the double polarization hysteresis typical of a reversible AFE → ferroelectric (FE) phase transition. In this study; as demonstrated by (1-x)NaNbO3-xCaZrO3 system; the influence of chemical modification and electrical poling on the AFE/FE phase stability was investigated; primarily focusing on the microstructural and crystallographic evolutions. Together with the macroscopic polarization hysteresis measurements; a well-demonstrated structure-property relationship was presented. It was found that the CaZrO3 substitution into NaNbO3 can effectively destabilize the FE Q phase and correspondingly lead to a spontaneous reverting to AFE P phase. In contrast to the reversible AFE → FE phase transition; the domain morphology evolution exhibits irreversible nature with a growing process of the orientational domains after applying electric field. Moreover; a multiple-zone axes electron diffraction map of P and Q phases has been summarized and is believed to be an efficient diagram to determine the AFE/FE nature of the NaNbO3-based systems. © 2015 AIP Publishing LLC;
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