Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy

被引：0
|
作者：
Sellai, Azzouz [1 ]
Kruszewski, Piotr [2 ,3 ]
Mesli, Abdelmadjid [3 ]
Peaker, Anthony R. [4 ]
Missousd, Mohamed [4 ]
机构：
[1] Sultan Qaboos University, Physics Department, 123 Muscat, Oman
[2] Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland
[3] Aix-Marseille University, IM2NP, UMR 6242 CNRS, 13397 Marseille Cedex 20, France
[4] University of Manchester, Microelectronics and Nanostructure Group, School of Electrical and Electronic Engineering, United Kingdom
来源：
Journal of Nanophotonics | 2012年 / 6卷 / 01期
关键词：
All Open Access; Green;
D O I：
10.1117/1.JNP.6.013502
中图分类号：
学科分类号：
摘要：
21
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