Preparation of roundish CeO2 and its polishing performances

被引：0

作者：

机构：

[1] Department of Chemistry, Nanchang University, Nanchang

来源：

Zhou, Xinmu | 1600年 / Editorial Office of Chinese Journal of Rare Metals卷 / 38期

关键词：

Ceria; Polishing; Roundish; Synthesis;

D O I：

10.13373/j.cnki.cjrm.2014.06.011

中图分类号：

学科分类号：

摘要：

The roundish CeO2 precursors with diameters of 200 nm were synthesized by solvothermal method. And the polishing powder was obtained by calcining the precursor at different temperatures and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), electron diffraction, and laser particle size analyzer. The effect of solvothermal temperatures, the kind and amount of dispersant on the CeO2 precursors and the effect of the different calcining temperatures and time on the performance of monocrystalline silicon polishing were studied. The results showed that the roundish precursors could be obtained using cerium chloride as the source, 0.75 mol·L-1 NH3·H2O as the precipitator, ethylene glycol as the solvent and polyvinyl pyrrolidone (PVP) as the dispersant, a turbid liquid was obtained after stirring for 30 min, then transferred into a 50 ml autoclave lined with polytetrafluoro ethylene (PTFE), put into the oven under 180℃ to react for 24 h. The product was precipitated, washed with deionized water and anhydrous ethanol each 3 times, then dried at about 60℃ to get the CeO2 precursors. The precursors transformed into the roundish CeO2 powders with D50 of 203 nm by calcining at 500℃, it had excellent dispersibility, and with the mass fraction of 0.2% polishing slurry, the higher polishing rate and the ultra-smooth surface of n(111)-type silicon wafer could be acquired after polished. ©, 2014, Editorial Office of Chinese Journal of Rare Metals. All right reserved.

引用

页码：1005 / 1010

页数：5

共 15 条

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