Normal growth kinetics of L-alanine doped ZTS crystals and chemical etching studies

被引：0

作者：

Cao, Ya-Chao ^{[1
]}

Li, Ming-Wei ^{[1
]}

Pan, Cui-Lian ^{[1
]}

Zhu, Ting-Xia ^{[1
]}

Yin, Hua-Wei ^{[1
]}

Cheng, Min ^{[1
]}

机构：

[1] College of Power Engineering, Key Laboratory of Low-Grade Energy Utilization Technologies and Systems, Chongqing University

来源：

Gongneng Cailiao/Journal of Functional Materials | 2014年 / 45卷 / 11期

关键词：

Chemical etching; Growth kinetics; L-alanine; Normal growth rate; ZTS crystal;

D O I：

10.3969/j.issn.1001-9731.2014.11.013

中图分类号：

学科分类号：

摘要：

Via studying the normal growth rates of the (100), (010) and (001) faces of ZTS crystal under different doping concentrations of L-alanine, we found that the normal growth rate of ZTS crystal increased linearly with the increase of supersaturation. With increase of doping concentration, L-alanine addition led to an initial increase and then a decrease of the normal growth rate of the (100) face. However, L-alanine doping led to a decrease first, followed by an increase and then a decrease again of the normal growth rates of the (010) and (001) faces. The growth of (100) face was featured mainly by the dislocation mechanism, and the growth of (010) and (001) faces are, however, featured by the continuous growth model as supported by the experimental results. Well-defined dislocation pits of rectangular shape were observed on the chemical etching (100) face of ZTS crystal by using optical microscopy. The dislocation density of (100) face was 33-308 mm-2. Study results indicated that dislocation density could be minimized when L-alanine concentration was set at 1 mol%.

引用

页码：11061 / 11065+11070

共 18 条

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