Surface potential measurement of carbon nanotube field-effect transistors using kelvin probe force microscopy

被引：0
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作者：
Umesaka, Takeo [1 ]
Ohnaka, Hirofumi [1 ]
Ohno, Yutaka [1 ,2 ]
Kishimoto, Shigeru [1 ,3 ]
Maezawa, Koichi [1 ]
Mizutani, Takashi [1 ,4 ]
机构：
[1] Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
[2] PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
[3] Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan
[4] Institute of Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 4 B期
关键词：
The surface potential of carbon nanotube field-effect transistors (CNT-FETs) was measured using Kelvin probe force microscopy (KFM). A clear potential image of the CNT channel with a diameter of 1.1 nm was obtained by measurement in air. The measured potential image was dependent on the sequence of the gate bias; and showed transient behavior with a time constant of several tens of minutes. These behaviors were consistent with the drain current transient and the hysteresis of the current-voltage characteristic of the CNT-FETs. © 2007 The Japan Society of Applied Physics;
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页码：2496 / 2500
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