Surface potential measurement of carbon nanotube field-effect transistors using kelvin probe force microscopy

被引：0

作者：

Umesaka, Takeo ^{[1
]}

Ohnaka, Hirofumi ^{[1
]}

Ohno, Yutaka ^{[1
,2
]}

Kishimoto, Shigeru ^{[1
,3
]}

Maezawa, Koichi ^{[1
]}

Mizutani, Takashi ^{[1
,4
]}

机构：

[1] Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

[2] PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

[3] Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan

[4] Institute of Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 4 B期

关键词：

The surface potential of carbon nanotube field-effect transistors (CNT-FETs) was measured using Kelvin probe force microscopy (KFM). A clear potential image of the CNT channel with a diameter of 1.1 nm was obtained by measurement in air. The measured potential image was dependent on the sequence of the gate bias; and showed transient behavior with a time constant of several tens of minutes. These behaviors were consistent with the drain current transient and the hysteresis of the current-voltage characteristic of the CNT-FETs. © 2007 The Japan Society of Applied Physics;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：2496 / 2500