High-temperature operation of 8.5 μm distributed feedback quantum cascade lasers

被引:2
作者
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China [1 ]
机构
[1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
来源
Chin. Phys. Lett. | 2009年 / 8卷
关键词
11;
D O I
10.1088/0256-307X/26/8/087804
中图分类号
学科分类号
摘要
We present a distributed feedback quantum cascade laser (DFB-QCL) emitting at a wavelength of 8.5 μm and operating up to 420 K (147°C) with a low-threshold current density in pulsed mode. The DFB-QCLs studied are based on a four-well active design; the central portion of the waveguide consists of 60 periods of lattice matched InP-based InGaAs/AlInAs. In the design of the device, an active structure with lower doping and a deep-top grating process are utilized to achieve high temperature operation with a lower-threshold current density. At 420 K, a low-threshold current density of 3.28 kA/cm2 and a single mode peak power of 15mW are achieved on an epilayer-up mounting device with ridge width of 26 μm and cavity length of 3.0 mm. A side mode suppression ratio of 25 dB at 420 K is obtained. © 2009 Chinese Physical Society and IOP Publishing Ltd.
引用
收藏
相关论文
共 11 条
  • [1] Faist J., Capasso F., Sivco D.L., Sirtro C., Hutchinson A.L., Cho A.Y., Science, 264, (1994)
  • [2] Bakhirkin Y.A., Kosterev A.A., Curl R.F., Tittel F.K., Yarekha D.A., Hvozdara L., Giovannini, Faist J., Appl. Phys. B, 82, (2006)
  • [3] Kosterev A.A., Tittel F.K., IEEE J. Quantum. Electron., 38, (2002)
  • [4] Evans A., Yu J.S., David J., Doris L., Mi K., Slivken S., Razeghi M., Appl. Phys. Lett., 84, (2004)
  • [5] Tahraoui A., Matlis A., Slivken S., Diaz J., Razeghi M., Appl. Phys. Lett., 78, (2001)
  • [6] Gmachl C., Tredicucci A., Capasso F., Hutchinson A.L., Sivco D.L., Sergent A.M., Mentzel T., Cho A.Y., Electron. Lett., 36, (2000)
  • [7] Yu J.S., Slivken S., Darvish S.R., Evans A., Gokden B., Razeghi M., Appl. Phys. Lett., 87, (2005)
  • [8] Hofstetter D., Beck M., Aellen T., Faist J., Appl. Phys. Lett., 78, (2001)
  • [9] Beck M., Hofstetter D., Aellen T., Faist J., Oesterle U., Ilegems M., Gini E., Melchior H., Science, 295, (2002)
  • [10] Kohler R., Gmachl C., Tredicucci A., Capasso F., Sivco D.L., Chu S.N.G., Cho A.Y., Appl, Phys. Lett., 76, (2000)