Thermal characterization of discrete device layers in ALXGA 1-xN based ultraviolet light emitting diodes

被引：0
|
作者：
Natarajan, Shweta [1 ]
Watkins, Bobby G. [1 ]
Adivarahan, Vinod [2 ]
Khan, Asif [3 ]
Graham, Samuel [1 ]
机构：
[1] Georgia Institute of Technology, George W. Woodruff School of Mechanical Engineering, Atlanta, GA, United States
[2] Nitek, Inc., 1804 Salem Church, Road, Irmo, SC, United States
[3] Department of Electrical Engineering, University of South Carolina, Columbia, SC, United States
来源：
ASME 2012 3rd International Conference on Micro/Nanoscale Heat and Mass Transfer, MNHMT 2012 | 2012年
关键词：
541.2 Aluminum Alloys - 549.3 Others; including Bismuth; Boron; Cadmium; Cobalt; Mercury; Niobium; Selenium; Silicon; Tellurium and Zirconium - 641.2 Heat Transfer - 701.1 Electricity: Basic Concepts and Phenomena - 712.1 Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 741 Light; Optics and Optical Devices;
D O I：
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学科分类号：
摘要：
27
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收藏
页码：695 / 705
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