Properties of Ga, Al co-doped and single-doped ZnO based thin films

被引：0
|
作者：
Ma, Hongfang [1 ,2 ]
Ma, Fang [1 ]
Zhang, Changcun [1 ]
Ma, Long [1 ]
Wang, Xiaorui [1 ]
机构：
[1] School of Materials Science and Engineering, Shandong Jianzhu University, Jinan,250101, China
[2] Key Laboratory of Renewable Energy Utilization Technologies in Buildings, Ministry of Education, Jinan,250101, China
来源：
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | 2015年 / 36卷 / 11期
关键词：
549.3; Others; including Bismuth; Boron; Cadmium; Cobalt; Mercury; Niobium; Selenium; Silicon; Tellurium and Zirconium - 701.1 Electricity: Basic Concepts and Phenomena - 712.1 Semiconducting Materials - 741.1 Light/Optics - 741.3 Optical Devices and Systems - 804 Chemical Products Generally - 804.2 Inorganic Compounds - 812.3 Glass - 813.2 Coating Materials - 933.1.2 Crystal Growth - 951 Materials Science;
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学科分类号：
摘要：
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页码：2685 / 2689
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