Effects of N2 on Growth Structure and Amount of H in Grain Boundaries of Nanocrystalline Diamond Films

被引：0
|
作者：
Wang Z. [1 ]
Weng J. [1 ]
Wang J. [1 ]
Liu F. [1 ]
机构：
[1] Key Laboratory of Plasma Chemistry and Advanced Materials of Hubei Province, Wuhan Institute of Technology, Wuhan
来源：
Zhongguo Biaomian Gongcheng/China Surface Engineering | 2020年 / 33卷 / 01期
关键词：
Grain boundary; Growth structure; Hydrogen; Microwave plasma; Nanocrystalline diamond films;
D O I：
10.11933/j.issn.1007-9289.20190616001
中图分类号：
学科分类号：
摘要：
An investigation on the influence of N2 on the growth structure and the amount of H in the grain boundary of nanocrystalline diamond films have been carried out in a MPCVD apparatus. The morphology, texture and quality of the deposited nanocrystalline diamond films were evaluated by SEM, XRD and Raman spectroscopy, FTIR and TEM. The content of hydrogen in the grain boundaries of nanocrystalline diamond film was calculated with the results of Raman spectra and FTIR. Results show that with the increase of N2, the shape of the grain clusters transforms from spherality to needle-like and the preferred orientation changs from <111> to <110> with the grain size and the quality decreasing dramatically. The amount of hydrogen, however, increases significantly with the increase of N2 in CO2-CH4-N2 gas mixtures. Besides that, diamond and crystal graphite are two main phases in the needle-like diamond films demonstrated by the results of TEM. The research indicates that increasing N2 in CO2-CH4-N2 gas mixtures is benefiting not only for the decrease of grain size and the transformation of the shape of the aggregates and the preferred orientation, but also for the increase of the amount of hydrogen in grain boundaries and inducing the production of crystal graphite in nanocrystalline diamond films. © 2020, Editorial Office of CHINA SURFACE ENGINEERING. All right reserved.
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页码：39 / 46
页数：7
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