Low-temperature silicon oxide offset spacer using plasma-enhanced atomic layer deposition for high-k/metal gate transistor

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作者：

Process Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan ^{[1
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来源：

Jpn. J. Appl. Phys. | / 4 PART 2卷

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D O I：

04DB11

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摘要：

Atomic layer deposition - Titanium oxides - Chemical bonds - Oxide films - Silicon compounds - Titanium nitride - X ray photoelectron spectroscopy - Drain current - High-k dielectric - Chemical vapor deposition - Refractory metal compounds - Temperature

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