Effects of crystallographic orientation on void growth and coalescence
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作者:
Liu, Wen-Hui
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School of Materials Science and Engineering, Central South University, Changsha 410083, ChinaSchool of Materials Science and Engineering, Central South University, Changsha 410083, China
Liu, Wen-Hui
[1
]
Zhang, Xin-Ming
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机构:
School of Materials Science and Engineering, Central South University, Changsha 410083, ChinaSchool of Materials Science and Engineering, Central South University, Changsha 410083, China
Zhang, Xin-Ming
[1
]
Tang, Jian-Guo
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机构:
School of Materials Science and Engineering, Central South University, Changsha 410083, ChinaSchool of Materials Science and Engineering, Central South University, Changsha 410083, China
Tang, Jian-Guo
[1
]
Zhou, Zhuo-Ping
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机构:
School of Materials Science and Engineering, Central South University, Changsha 410083, ChinaSchool of Materials Science and Engineering, Central South University, Changsha 410083, China
Zhou, Zhuo-Ping
[1
]
机构:
[1] School of Materials Science and Engineering, Central South University, Changsha 410083, China
Coalescence - Crystal lattices - Finite element method - Grain boundaries - Growth (materials) - Single crystals - Three dimensional;
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摘要:
The influence of crystallographic orientation on void growth and coalescence in FCC single crystal was simulated with 3D crystal plasticity finite element, and the rate-dependent crystal plasticity theory was implemented as a user material subroutine. A 3D unit cell including one sphere void and two sphere voids was employed with three-dimensional 12 slip systems. The computed results of different crystallographic orientations were compared. The results show that the crystallographic orientation has significant influence on the growth behavior of void, and the void growth direction and shape significantly depend on the crystallographic orientation. Due to inhomogeneous deformation, some corners where crack will initiate can be induced at grain boundaries. The rotation of the crystalline lattice and plastic activity on slip systems are mainly concentrated in the region around voids.