Self-heating p-channel metal-oxide-semiconductor field-effect transistors for reliability monitoring of negative-bias temperature instability

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作者：
Department of Electronic Engineering, Cheng Shiu University, No. 840, Chengching Rd., Niaosong Township, Kaohsiung County 833, Taiwan [1 ]
不详 [2 ]
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来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 12期
关键词：
MOSFET devices;
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摘要：
Journal article (JA)
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页码：7639 / 7642
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