Development of high-power-density interleaved DC/DC converter with SiC devices

被引：0

作者：

Kitamura, Tatsuya ^{[1
]}

Yamada, Masaki ^{[1
]}

Harada, Shigeki ^{[1
]}

Koyama, Masato ^{[1
]}

机构：

[1] MitsubishiElectric Corporation, 2-7-3, Marunouchi, Chiyoda-ku, Tokyo

来源：

IEEJ Transactions on Industry Applications | 2014年 / 134卷 / 11期

关键词：

DC/DC converter; High power density; SiC;

D O I：

10.1541/ieejias.134.956

中图分类号：

学科分类号：

摘要：

We developed an interleaved DC/DC converter with SiC devices. We applied full-SiC modules including MOSFETs and SBDs to the interleaved DC/DC converter to achieve a high power density. SiC has a high temperature resistance, which facilitates improvement in high-frequency drives. We achieved a high power density by utilizing the high temperature resistance feature. We also fabricated the prototype and tested it with loads up to 65 kW © 2014 The Institute of Electrical Engineers of Japan.

引用

页码：956 / 961

页数：5

共 12 条

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