Anodization of silicon and aluminum in the non-self-sustained glow discharge plasma

被引：0

作者：

Burachevskiy, Yu.A. ^{[1
]}

Burdovitsin, V.A. ^{[1
]}

Oks, E.M. ^{[1
]}

机构：

[1] Tomsk State University of Control Systems and Radioelectronics, 40 Lenin ave., Tomsk, 634050, Russia

来源：

Applied Physics | 2011年 / 02期

关键词：

Silicon - Aluminum oxide - Glow discharges - Oxygen - Silicon oxides - Alumina - Aluminum;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Results of silicon and aluminum anodization in oxygen plasma are presented. Plasma was formed by the hollow cathode discharge in which an electron beam excitation at the oxygen pressure 20 Pa was applied The current density through anodized sample did not exceed 1.5 mA/cm2 , and its temperature was 200-250 °C. On the aluminum and silicon surfaces, the continuous faultless Al2O3 and SiO2 films were formed. Growth rates of oxide layers were 150-200 nm/hour for Al2O 3and 400-800 nm/hour for SiO2.

引用

页码：23 / 26

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