Dielectric breakdown in Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junction

被引：0
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作者：
Khan, Ayaz Arif [1 ]
Schmalhorst, J. [1 ]
Thomas, A. [1 ]
Schebaum, O. [1 ]
Reiss, G. [1 ]
机构：
[1] Thin Films and Nano Structures, Department of Physics, Bielefeld University, 33501 Bielefeld, Germany
来源：
Journal of Applied Physics | 2008年 / 103卷 / 12期
关键词：
The time-dependent dielectric breakdown has been investigated in Co-Fe-B/MgO/Co-Fe-B junctions by voltage ramp experiments and focused on its dependence on the barrier thickness; junction area; polarity of the applied voltage; ramp speed; and annealing temperature. The results suggest that the breakdown voltage strongly depends both on the polarity of the applied voltage and the annealing temperature. Magnetic tunnel junctions (MT[!text type='Js']Js[!/text]) with positive bias on the top electrode show higher breakdown voltage than MT[!text type='Js']Js[!/text] with negative bias. We found that there is a significant decrease in the breakdown voltage when the annealing temperature is increased above 350 °C. © 2008 American Institute of Physics;
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