Effect of plasma dry etching on gate leakage of recessed AlGaN/GaN HEMTs

被引：0
|
作者：
Li, Chengzhan [1 ]
Pang, Lei [1 ]
Liu, Xinyu [1 ]
Huang, Jun [1 ]
Liu, Jian [1 ]
Zheng, Yingkui [1 ]
He, Zhijing [1 ]
机构：
[1] Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2007年 / 28卷 / 11期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1777 / 1781
相关论文
共 50 条
  • [41] Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs
    Chen, Changxi
    Wang, Quan
    Li, Wei
    Wang, Qian
    Feng, Chun
    Jiang, Lijuan
    Xiao, Hongling
    Wang, Xiaoliang
    JOURNAL OF SEMICONDUCTORS, 2021, 42 (09)
  • [42] DC and RF characteristics of AlGaN/GaN HEMTs on SiC with gate recessed by using ICP etching of BCl3/Cl2
    Hyung Sup Yoon
    Byoung Gue Min
    Jong Min Lee
    Dong Min Kang
    Ho Kyun Ahn
    Sung Il Kim
    Chul Won Ju
    Hae Cheon Kim
    Jong Won Lim
    Journal of the Korean Physical Society, 2015, 67 : 654 - 657
  • [43] DC and RF characteristics of AlGaN/GaN HEMTs on SiC with gate recessed by using ICP etching of BCl3/Cl2
    Yoon, Hyung Sup
    Min, Byoung Gue
    Lee, Jong Min
    Kang, Dong Min
    Ahn, Ho Kyun
    Kim, Sung Il
    Ju, Chul Won
    Kim, Hae Cheon
    Lim, Jong Won
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2015, 67 (04) : 654 - 657
  • [44] Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs
    Changxi Chen
    Quan Wang
    Wei Li
    Qian Wang
    Chun Feng
    Lijuan Jiang
    Hongling Xiao
    Xiaoliang Wang
    Journal of Semiconductors, 2021, (09) : 70 - 75
  • [45] Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs
    Changxi Chen
    Quan Wang
    Wei Li
    Qian Wang
    Chun Feng
    Lijuan Jiang
    Hongling Xiao
    Xiaoliang Wang
    Journal of Semiconductors, 2021, 42 (09) : 70 - 75
  • [46] Effects of a recessed camel-gate head structure on normally-off ALGaN/GaN HEMTs
    Mansoor Ali Khan
    Jun-Woo Heo
    Young-Jin Kim
    Hyun-Chang Park
    Hyung-Moo Park
    Hyun-Seok Kim
    Jae-Kyoung Mun
    Journal of the Korean Physical Society, 2013, 62 : 787 - 793
  • [47] Digital etching for highly reproducible low damage gate recessing on AlGaN/GaN HEMTs
    Buttari, D
    Heikman, S
    Keller, S
    Mishra, UK
    IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2002, : 461 - 469
  • [48] Improved breakdown characteristic of AlGaN/GaN HEMTs with a width gradient recessed dual-gate structure
    Zhang, Sheng
    Wei, Ke
    Zhang, Yi-chuan
    Chen, Xiao-juan
    Liu, Xin-Yu
    Niu, Jie-bin
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 37 (11)
  • [49] Simulation of Gate Leakage Current of AlGaN/GaN HEMTs: Effects of the Gate Edges and Self-Heating
    Wang, Ashu
    Zeng, Lingyan
    Wang, Wen
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (11) : S3025 - S3029
  • [50] Effects of a recessed camel-gate head structure on normally-off ALGaN/GaN HEMTs
    Khan, Mansoor Ali
    Heo, Jun-Woo
    Kim, Young-Jin
    Park, Hyun-Chang
    Park, Hyung-Moo
    Kim, Hyun-Seok
    Mun, Jae-Kyoung
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013, 62 (05) : 787 - 793
12345