Effect of plasma dry etching on gate leakage of recessed AlGaN/GaN HEMTs

被引：0
|
作者：
Li, Chengzhan [1 ]
Pang, Lei [1 ]
Liu, Xinyu [1 ]
Huang, Jun [1 ]
Liu, Jian [1 ]
Zheng, Yingkui [1 ]
He, Zhijing [1 ]
机构：
[1] Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2007年 / 28卷 / 11期
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页码：1777 / 1781
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