Development of a wideband highly efficient GaN VMCD VHF/UHF power amplifier

被引：0
|
作者：
Lin S. [1 ]
Fathy A.E. [1 ]
机构：
[1] Min H. Kao Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville
来源：
Progress In Electromagnetics Research C | 2011年 / 19卷
关键词：
D O I：
10.2528/PIERC10112306
中图分类号：
学科分类号：
摘要：
A 50 to 550 MHz wideband gallium nitride (GaN) HEMT power amplifier with over 43 dBm output power and 63% drain efficiency has been successfully developed. The demonstrated wideband power amplifier utilizes two GaN HEMTs and operates in a push-pull voltage mode Class D (VMCD). The design is based on a large signal simulation to optimize the power amplifier's output power and efficiency. To assure a wideband operation, a coaxial line impedance transformer has been used as part of the input matching network; meanwhile, a wideband a 1:1 ferrite loaded balun and low pass filters are utilized on the amplifier's output side instead of the conventional serial harmonic termination.
引用
收藏
页码：135 / 147
页数：12
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