A New Voltage-Doubler Rectifier for High-Efficiency LLC Resonant Converters

被引：0
|
作者：
Yeo, Jung-Hyun [1 ]
Kim, Chong-Eun [2 ]
机构：
[1] Department of Railroad Electrical and Electronics Engineering, Korea National University of Transportation, Uiwang,16106, Korea, Republic of
[2] Department of Railroad Electrical and Information Engineering, Korea National University of Transportation, Uiwang,16106, Korea, Republic of
来源：
Energies | 2024年 / 17卷 / 24期
关键词：
The LLC resonant converter is widely recognized as an effective solution for achieving high efficiency in high-frequency operations. This is primarily due to its ability to perform zero-voltage switching (ZVS) on primary switches and zero-current switching (ZCS) on secondary rectifier switches. However; implementing the secondary rectifier of an LLC resonant converter often requires the use of jumpers on the PCB to construct circuit topologies such as the center-tap rectifier (CTR); full-bridge rectifier; and voltage-doubler rectifier (VDR). In conventional VDR configurations; the source voltage of the high-side FET fluctuates according to the switching operation of the primary switch. This fluctuation necessitates auxiliary windings or bootstrap circuits to provide a floating voltage source; adding significant complexity to gate drive circuits in high-power-density applications. This complexity poses a major barrier to the practical adoption of VDRs. To address these challenges; this paper proposes a novel rectification circuit based on the VDR topology; specifically designed for LLC resonant converters; offering simplified gate drive circuitry and improved suitability for high-power-density applications. © 2024 by the authors;
D O I：
10.3390/en17246262
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