GaInNAs p-i-n photodetectors with multiquantum wells structure

被引：0
|
作者：
Chen, Yung-Feng [1 ]
Chen, Wei-Cheng [1 ]
Chuang, Ricky W. [1 ]
Su, Yan-Kuin [1 ]
Tsai, Huo-Lieh [2 ]
机构：
[1] Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
[2] Advanced Device Technology Department, Taiwan Semiconductor Manufacturing Co., Ltd., Tainan 741, Taiwan
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 4 PART 2期
关键词：
GaInNAs/GaAs p-i-n photodetectors with 3 and 15 periods multiquantum wells (MQW) as the i-layer have been grown by metal-organic vapor-phase epitaxy (MOVPE). The cutoff wavelength of spectral responsivity occurs at around 1150nm and reflects the transition energy of the GaInNAs/GaAs MQW. Because of to the good crystal quality that the devices with three periods MQW have; a two orders of magnitude increase in the responsivity rejection ratio is realized between 1150 and 1250 nm at a reverse bias of 2.0 V. The junction breakdown voltage is obtained at a reverse bias of 18.4 V. The ideality factor indicates that the conduction mechanism is dominated by the diffusion process; and the defect scattering effect caused by the misfit dislocations is only slight. On the other hand; the device with 15 periods MQW induces a higher value of misfit dislocations; and shows a partial relaxation phenomenon and thus it shows relatively poor characteristics. © 2008 The Japan Society of Applied Physics;
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页码：2982 / 2986
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